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1. product profile 1.1 general description 160 w ldmos power transistor for base st ation applications at frequencies from 2300 mhz to 2400 mhz. [1] single carrier is-95 with pilot, paging, sync and 6 traffic channels (walsh codes 8 - 13). par = 9.7 db at 0.01 % probability on the ccdf. c hannel bandwidth is 1.2288 mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? designed for broadband operation (2300 mhz to 2400 mhz) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers fo r base stations and multi carrier applications in the 2300 mhz to 2400 mhz frequency range BLF7G24L-160P; blf7g24ls-160p power ldmos transistor rev. 5 ? 12 july 2013 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr 885k (mhz) (ma) (v) (w) (db) (%) (dbc) is-95 2300 to 2400 1200 28 30 18.5 27.5 ? 45.5 [1]
BLF7G24L-160P_7g24ls-160p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 5 ? 12 july 2013 2 of 14 nxp semiconductors BLF7G24L-160P; blf7g24ls-160p power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol BLF7G24L-160P (sot539a) 1drain1 2drain2 3gate1 4gate2 5source [1] blf7g24ls-160p (sot539b) 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 43 4 3 5 1 2 sym117 5 12 43 4 3 5 1 2 sym117 table 3. ordering information type number package name description version BLF7G24L-160P - flanged balanced ceramic package; 2 mounting holes; 4 leads sot539a blf7g24ls-160p - earless flanged balanced ceramic package; 4 leads sot539b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c BLF7G24L-160P_7g24ls-160p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 5 ? 12 july 2013 3 of 14 nxp semiconductors BLF7G24L-160P; blf7g24ls-160p power ldmos transistor 5. thermal characteristics 6. characteristics 7. test information remark: all testing performed in a class-ab production test circuit. 7.1 ruggedness in class-ab operation the BLF7G24L-160P and blf7g24ls-160p are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 1200 ma; p l = 160 w; f = 2300 mhz. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l =30w; v ds =28v; i dq = 1200 ma 0.2 k/w table 6. characteristics t j = 25 ? c per section, unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =1ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 102 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 2.8 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v -19-a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na g fs forward transconductance v ds =10v; i d = 3.57 a - 6.9 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =3.57a -0.150.23 ? table 7. functional test information test signal: single carrier is-95 with pilot, paging, sync and 6 traffic channels (walsh codes 8 - 13). par = 9.7 db at 0.01 % probability on the ccdf, channel bandwidth is 1.2288 mhz; f 1 = 2300 mhz; f 2 = 2400 mhz; rf performance at v ds =28v; i dq = 1200 ma; t case =25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit g p power gain p l(av) = 30 w 17.8 18.5 - db rl in input return loss p l(av) =30w - ? 13.5 ? 9db ? d drain efficiency p l(av) = 30 w 25 27.5 - % acpr 885k adjacent channel power ratio (885 khz) p l(av) =30w - ? 45.5 ? 41.5 dbc BLF7G24L-160P_7g24ls-160p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 5 ? 12 july 2013 4 of 14 nxp semiconductors BLF7G24L-160P; blf7g24ls-160p power ldmos transistor 7.2 impedance information 7.3 graphs 7.3.1 pulsed cw table 8. typical impedance measured load-pull data. typical values per section. i dq = 600 ma; main transistor v ds = 28 v. z s and z l defined in figure 1 . f (mhz) z s (? ) z l ( ? ) 2300 2.5 ? j5.9 3.1 ? j4.3 2400 4.6 ? j7.2 2.9 ? j4.2 fig 1. definition of transistor impedance 001aaf059 drain z l z s gate v ds = 28 v; i dq = 1200 ma; ? =10%; t p =0.10ms. (1) g p at f = 2300 mhz (2) g p at f = 2350 mhz (3) g p at f = 2400 mhz (4) ? d at f = 2300 mhz (5) ? d at f = 2350 mhz (6) ? d at f = 2400 mhz v ds = 28 v; i dq = 1200 ma; ? =10%; t p =0.10ms. (1) g p at f = 2300 mhz (2) g p at f = 2350 mhz (3) g p at f = 2400 mhz (4) ? d at f = 2300 mhz (5) ? d at f = 2350 mhz (6) ? d at f = 2400 mhz fig 2. power gain and drain efficiency of pulsed cw as function of output power; typical values fig 3. power gain and drain efficiency of pulsed cw as function of output power; typical values d d d 3 / g % p * s s s g % ' d d d 3 / : * s s s g % ' BLF7G24L-160P_7g24ls-160p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 5 ? 12 july 2013 5 of 14 nxp semiconductors BLF7G24L-160P; blf7g24ls-160p power ldmos transistor 7.3.2 is-95 v ds = 28 v; i dq = 1200 ma; ? =10%; t p =0.10ms. (1) f = 2300 mhz (2) f = 2350 mhz (3) f = 2400 mhz fig 4. input return loss of pulsed cw as a function of output power; typical values d d d 3 / g % p 5 / l q g % v ds = 28 v; i dq = 1200 ma. (1) g p at f = 2300 mhz (2) g p at f = 2350 mhz (3) g p at f = 2400 mhz (4) ? d at f = 2300 mhz (5) ? d at f = 2350 mhz (6) ? d at f = 2400 mhz v ds = 28 v; i dq = 1200 ma. (1) g p at f = 2300 mhz (2) g p at f = 2350 mhz (3) g p at f = 2400 mhz (4) ? d at f = 2300 mhz (5) ? d at f = 2350 mhz (6) ? d at f = 2400 mhz fig 5. power gain and drain efficiency of is-95 as function of output power; typical values fig 6. power gain and drain efficiency of is-95 as function of output power; typical values d d d 3 / g % p * s s s g % ' d d d 3 / : * s s s g % ' BLF7G24L-160P_7g24ls-160p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 5 ? 12 july 2013 6 of 14 nxp semiconductors BLF7G24L-160P; blf7g24ls-160p power ldmos transistor v ds = 28 v; i dq = 1200 ma. (1) f = 2300 mhz (2) f = 2350 mhz (3) f = 2400 mhz v ds = 28 v; i dq = 1200 ma. (1) f = 2300 mhz (2) f = 2350 mhz (3) f = 2400 mhz fig 7. input return loss of is-95 as a function of output power; typical values fig 8. adjacent channel power ratio (885 khz) of is-95 as a function of output power; typical values d d d 3 / g % p 5 / l q g % d d d 3 / g % p $ & |